SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC940
DESCRIPTION
·With TO-3 package
·High current capability
·Wide area of safe operation
APPLICATIONS
·For B/W TV horizontal deflection application
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
? )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25?
Open emitter
Open base
Open collector
CONDITIONS
VALUE
200
90
7
7.5
15
50
150
-65~150
UNIT
V
V
V
A
A
W
?
?
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC940
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ; I
B
=0
90
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ; I
C
=0
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=5A; I
B
=0.5A
1.5
V
I
CBO
Collector cut-off current
V
CB
=90V; I
E
=0
0.1
mA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
0.1
mA
h
FE
DC current gain
I
C
=5A ; V
CE
=5V
15
70
f
T
Transition frequency
I
C
=0.5A ; V
CE
=10V
20
MHz
u
h
FE-2
Classifications
O
15-35
Q
25-45
P
35-70
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC940
Fig.2 Outline dimensions
3